Image pickup circuit, CMOS sensor, and image pickup device

ABSTRACT

Disclosed herein is an image pickup circuit including: amplifying means for amplifying a charge corresponding to an amount of light received by a photodetector, and outputting a pixel signal; ramp signal generating means for generating a ramp signal whose voltage drops with a fixed slope from a predetermined initial voltage; and comparing means for comparing the pixel signal output by the amplifying means with the ramp signal output by the ramp signal generating means. A reference potential of the pixel signal output by the amplifying means and a reference potential of the ramp signal output by the ramp signal generating means are at a same level.

CROSS REFERENCES TO RELATED APPLICATIONS

The present application is a Continuation of U.S. application Ser. No.15/442,566, filed Feb. 24, 2017, which is a Continuation of U.S.application Ser. No. 15/058,845, filed Mar. 2, 2016, now U.S. Pat. No.9,654,717, issued May 16, 2017, which is a Continuation of U.S.application Ser. No. 14/150,233, filed Jan. 8, 2014, now Abandoned,which is a Continuation of U.S. application Ser. No. 12/150,004, filedApr. 24, 2008, now U.S. Pat. No. 8,654,230, issued Feb. 18, 2014, whichclaims priority to Japanese Patent Application JP 2007-132097, filedwith the Japanese Patent Office on May 17, 2007, and Japanese PatentApplication JP 2007-178075, filed with the Japanese Patent Office onJul. 6, 2007, the entire contents of which being incorporated herein byreference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to an image pickup circuit, a CMOS sensor,and an image pickup device, and particularly to an image pickup circuit,a CMOS sensor, and an image pickup device that can reduce the noise ofan image.

2. Description of the Related Art

In the past, a CMOS (Complementary Metal Oxide Semiconductor) sensor asa solid-state image pickup element has advantages such as lower powerconsumption, higher speed and the like over a CCD (Charge CoupledDevice), for example, and has recently been widely a same level.incorporated into a portable telephone, a compact digital camera, ahigh-grade single-lens reflex camera, a camcorder, a monitoring camera,a guidance system and the like.

In addition, a high-performance sensor that outputs a high-quality imagehas recently been developed in which sensor functional circuit blockssuch as an image processing circuit and the like are formed on a chiptogether with a CMOS sensor.

For example, Japanese Patent No. 3734717 or Japanese Patent No. 3710361(referred to as Patent Document 1 or 2 hereinafter) discloses techniquesin which using a CDS (Correlated Double Sampling) circuit to process animage signal in a CMOS sensor, a received light signal from a photodiodewithin a pixel is passed through an analog CDS circuit disposed in eachpixel column to thereby remove noise included in the pixel signal, andthereafter A/D conversion is performed.

However, in a case of thus using the CDS circuits, there is for examplea problem of occurrence of noise in a stripe-shaped fixed pattern due tovariations of the CDS circuits in each pixel column, a problem of anincrease in circuit area because it is necessary to provide a capacitiveelement for retaining a signal value after CDS processing, or a problemof susceptibility to switching noise or the like because rapidhorizontal scanning of an analog signal is performed by a shiftregister.

Accordingly, for example, Japanese Patent Laid-Open No. 2005-328135(referred to as Patent Document 3 hereinafter) proposes a solution tothese problems by a parallel column A/D (Analog/Digital) conversionsystem (hereinafter referred to as a column AD system).

In the column AD system, an A/D converter is placed in each pixelcolumn, and analog signals of respective pixels in selected columns arecollectively output to respective vertical signal lines and are thendirectly subjected to A/D conversion. Therefore, the problems occurringwhen the CDS circuit as described above is used are solved, andhigh-precision noise removal can be performed.

Further, in the column AD system, because of parallel processing in eachrow in a horizontal direction of an image, scanning in the horizontaldirection does not have to be driven at a high frequency, and A/Dconversion can be driven at a low frequency in a vertical direction. Thecolumn AD system therefore has another advantage of being able toseparate a noise component occurring in a high-frequency band from asignal component easily.

A configuration of a CMOS sensor employing the column AD system will bedescribed in the following with reference to FIG. 1.

In FIG. 1, a CMOS sensor 11 includes an FD (Floating Diffusion) 12, atransistor 13, a current source 14, a reference voltage circuit 15, aresistance 16, N comparators 17.sub.1 to 17.sub.N, and N counters18.sub.1 to 18.sub.N.

Incidentally, FIG. 1 shows one of pixels forming a pixel array in whichthe plurality of pixels detecting light are arranged in the form of alattice, and does not show the other pixels. Of constituent elements ofthe one pixel, only the FD 12 and the transistor 13 for detecting apixel signal are shown, while transistors necessary to read the pixelsignal such as a transfer transistor, a reset transistor, a selectiontransistor and the like and a photodiode are not shown.

As shown in FIG. 1, one terminal of the FD 12 is grounded, and anotherterminal of the FD 12 is connected to the gate of the transistor 13. Thesource of the transistor 13 is connected to a power supply voltage VDDfor driving. The drain of the transistor 13 is grounded via the currentsource 14, and is connected to one input terminal of the comparator17.sub.1.

The output terminal of the reference voltage circuit 15 is connected tothe power supply voltage VDD for driving via the resistance 16, and isconnected to another input terminal of the comparator 17.sub.1. Theoutput terminal of the comparator 17.sub.1 is connected to the counter18.sub.1. As with the comparator 17.sub.1, the comparators 17.sub.2 to17.sub.N have one input terminal connected to the drain of a transistorof a pixel not shown in the figure, have another input terminalconnected to the output terminal of the reference voltage circuit 15,and have an output terminal connected to the counters 18.sub.2 to18.sub.N, respectively.

A charge corresponding to an amount of light received by the photodiodenot shown in the figure is transferred to the FD 12 to be accumulated inthe FD 12. The transistor 13 amplifies the charge accumulated in the FD12 and then supplies a pixel signal P to one input terminal of thecomparator 17.sub.1. The other input terminal of the comparator 17.sub.1is supplied with a ramp signal R output from the reference voltagecircuit 15. Then, the comparator 17.sub.1 outputs a comparison signalindicating a result of comparing the pixel signal P and the ramp signalR with each other to the counter 18.sub.1. The counter 18.sub.1 counts apredetermined clock signal according to the comparison signal, and thenoutputs the count value as pixel data.

In the thus formed CMOS sensor 11, the FD 12 connected to the gate ofthe transistor 13 has a parasitic capacitance with GND, and thereference potential of the pixel signal P is a GND level, whereas thereference potential of the ramp signal R is the level of the powersupply voltage VDD. Thus, for example, when a noise occurs in the powersupply voltage VDD, the noise is superimposed on the ramp signal R, andeffect of the noise appears in the result of comparing the pixel signalP and the ramp signal R with each other.

FIG. 2 shows an example of laterally drawn noise caused by such noiseand occurring in an image. The laterally drawn noise appears as arandomly changing noise.

SUMMARY OF THE INVENTION

As described above, the noise of the power supply voltage results in anoise in an image.

The present invention has been made in view of such a situation. It isdesirable to be able to reduce a noise in an image.

According to a first embodiment of the present invention, there isprovided an image pickup circuit including: amplifying means foramplifying a charge corresponding to an amount of light received by aphotodetector, and outputting a pixel signal; ramp signal generatingmeans for generating a ramp signal whose voltage drops with a fixedslope from a predetermined initial voltage; and comparing means forcomparing the pixel signal output by the amplifying means with the rampsignal output by the ramp signal generating means; wherein a referencepotential of the pixel signal output by the amplifying means and areference potential of the ramp signal output by the ramp signalgenerating means are at a same level.

According to a second embodiment of the present invention, there isprovided a CMOS sensor formed by disposing an image pickup circuit on asemiconductor chip, wherein the image pickup circuit includes amplifyingmeans for amplifying a charge corresponding to an amount of lightreceived by a photodetector, and outputting a pixel signal, ramp signalgenerating means for generating a ramp signal whose voltage drops with afixed slope from a predetermined initial voltage, and comparing meansfor comparing the pixel signal output by the amplifying means with theramp signal output by the ramp signal generating means, and a referencepotential of the pixel signal output by the amplifying means and areference potential of the ramp signal output by the ramp signalgenerating means are at a same level.

According to a third embodiment of the present invention, there isprovided an image pickup device having a CMOS sensor formed by disposingan image pickup circuit on a semiconductor chip, wherein the imagepickup circuit includes amplifying means for amplifying a chargecorresponding to an amount of light received by a photodetector, andoutputting a pixel signal, ramp signal generating means for generating aramp signal whose voltage drops with a fixed slope from a predeterminedinitial voltage, and comparing means for comparing the pixel signaloutput by the amplifying means with the ramp signal output by the rampsignal generating means, and a reference potential of the pixel signaloutput by the amplifying means and a reference potential of the rampsignal output by the ramp signal generating means are at a same level.

The first to third embodiments of the present invention amplify a chargecorresponding to an amount of light received by a photodetector, outputa pixel signal, generate a ramp signal whose voltage drops with a fixedslope from a predetermined initial voltage, and compare the pixel signalwith the ramp signal. A reference potential of the pixel signal and areference potential of the ramp signal are at a same level.

According to the first to third embodiments of the present invention, itis possible to reduce noise in an image.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram showing a configuration of an example of aCMOS sensor in the past;

FIG. 2 is a diagram showing an example of laterally drawn noiseoccurring in an image;

FIG. 3 is a block diagram showing an example of configuration of anembodiment of a CMOS sensor to which the present invention is applied;

FIG. 4 is a diagram of operation of the CMOS sensor;

FIG. 5 is a circuit diagram showing an example of configuration of theCMOS sensor;

FIG. 6 is a circuit diagram showing an example of configuration of areference voltage circuit;

FIG. 7 is a circuit diagram showing the configuration of an example of areference voltage circuit in the past;

FIG. 8 is a diagram of assistance in explaining a ramp signal at a timeof increased gain;

FIG. 9 is a diagram of assistance in explaining a ramp signal at anoffset time; and

FIG. 10 is a diagram of assistance in explaining a ramp signal at anoffset time in the past.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments of the present invention will hereinafter bedescribed. Correspondences between constitutional requirements of thepresent invention and embodiments described in the specification or thedrawings are illustrated as follows. This description is to confirm thatembodiments supporting the present invention are described in thespecification or the drawings. Therefore, even when there is anembodiment described in the specification or drawings but not describedhere as an embodiment corresponding to a constitutional requirement ofthe present invention, it does not signify that the embodiment does notcorrespond to the constitutional requirement. Conversely, even when anembodiment is described here as corresponding to a constitutionalrequirement, it does not signify that the embodiment does not correspondto constitutional requirements other than that constitutionalrequirement.

An image pickup circuit according to a first embodiment of the presentinvention includes: amplifying means (for example a transistor 42 inFIG. 5) for amplifying a charge corresponding to an amount of lightreceived by a photodetector, and outputting a pixel signal; ramp signalgenerating means (for example a reference voltage circuit 26 in FIG. 5)for generating a ramp signal whose voltage drops with a fixed slope froma predetermined initial voltage; and comparing means (for examplecomparators 31.sub.1 to 31.sub.N in FIG. 5) for comparing the pixelsignal output by the amplifying means with the ramp signal output by theramp signal generating means; wherein a reference potential of the pixelsignal output by the amplifying means and a reference potential of theramp signal output by the ramp signal generating means are at a samelevel.

In the image pickup circuit according to the first embodiment of thepresent invention, the ramp signal generating means can include gainchanging means (for example a gain changing circuit 54 in FIG. 6) forchanging a gain of an image picked up by the image pickup circuit bychanging the slope of the ramp signal and a transistor (for example atransistor 53 in FIG. 6) forming a current mirror circuit together withthe gain changing means, and when the gain is at a minimum, a ratiobetween conductance of the gain changing means and conductance of thetransistor is for example one.

In the image pickup circuit according to the first embodiment of thepresent invention, the ramp signal is in a form having a first sectionin which the voltage of the ramp signal drops from a first initialvoltage with a fixed slope and a second section in which the voltage ofthe ramp signal drops from a second initial voltage with a fixed slope,and the ramp signal generating means can further include normal rampsignal generating means (for example a ramp generating circuit 56 inFIG. 6) for generating the ramp signal whose first initial voltage andwhose second initial voltage are equal to each other and offset means(for example an offset circuit 57 in FIG. 6) for superimposing an offsetcomponent for making the first initial voltage higher than the secondinitial voltage on the ramp signal at an offset time when the firstinitial voltage and the second initial voltage are offset from eachother.

A CMOS sensor according to a second embodiment of the present inventionis a CMOS sensor formed by disposing an image pickup circuit on asemiconductor chip, wherein the image pickup circuit includes amplifyingmeans (for example a transistor 42 in FIG. 5) for amplifying a chargecorresponding to an amount of light received by a photodetector, andoutputting a pixel signal, ramp signal generating means (for example areference voltage circuit 26 in FIG. 5) for generating a ramp signalwhose voltage drops with a fixed slope from a predetermined initialvoltage, and comparing means (for example comparators 31.sub.1 to31.sub.N in FIG. 5) for comparing the pixel signal output by theamplifying means with the ramp signal output by the ramp signalgenerating means; wherein a reference potential of the pixel signaloutput by the amplifying means and a reference potential of the rampsignal output by the ramp signal generating means are at a same level.

An image pickup device according to a third embodiment of the presentinvention is an image pickup device having a CMOS sensor formed bydisposing an image pickup circuit on a semiconductor chip, wherein theimage pickup circuit includes amplifying means (for example a transistor42 in FIG. 5) for amplifying a charge corresponding to an amount oflight received by a photodetector, and outputting a pixel signal, rampsignal generating means (for example a reference voltage circuit 26 inFIG. 5) for generating a ramp signal whose voltage drops with a fixedslope from a predetermined initial voltage, and comparing means (forexample comparators 31.sub.1 to 31.sub.N in FIG. 5) for comparing thepixel signal output by the amplifying means with the ramp signal outputby the ramp signal generating means; wherein a reference potential ofthe pixel signal output by the amplifying means and a referencepotential of the ramp signal output by the ramp signal generating meansare at a same level.

Concrete embodiments to which the present invention is applied willhereinafter be described in detail with reference to the drawings.

FIG. 3 is a block diagram showing an example of configuration of anembodiment of a CMOS sensor to which the present invention is applied.

The CMOS sensor 21 in FIG. 3 includes a system controlling unit 22, avertical scanning circuit 23, a pixel array 24, a PLL (Phase LockedLoop) 25, a reference voltage circuit 26, a column ADC (Analog toDigital Converter) 27, a horizontal scanning circuit 28, and a senseamplifier 29.

The system controlling unit 22 controls each of the blocks forming theCMOS sensor 21.

The vertical scanning circuit 23 sequentially supplies a signal forcontrolling output of a pixel signal to pixels arranged in a verticaldirection of the pixel array 24 in predetermined timing according tocontrol of the system controlling unit 22.

The pixel array 24 is formed by arranging a plurality of pixels in theform of a lattice. In FIG. 3, pixels other than a pixel 24P are notshown. In the pixel array 24, the pixels arranged in the verticaldirection sequentially output a pixel signal according to a controlsignal supplied from the vertical scanning circuit 23.

The PLL 25 generates a clock signal of a predetermined frequencynecessary to drive each of the blocks within the CMOS sensor 21 on thebasis of an externally supplied clock signal (CK). The PLL 25 thensupplies the generated clock signal to the reference voltage circuit 26and the column ADC 27.

The reference voltage circuit 26 generates a ramp signal R whose voltagedrops from a predetermined initial voltage with a fixed slope. Thereference voltage circuit 26 then supplies the ramp signal R to thecolumn ADC 27.

The column ADC 27 includes a comparator 31, a counter 32, and a bus 33.Incidentally, in the column ADC 27, a plurality of combinations ofcomparators 31 and counters 32 are arranged in a horizontal direction insuch a manner as to correspond to the number of pixels arranged in thehorizontal direction of the pixel array 24. However, FIG. 3 shows oneset of the comparator 31 and the counter 32.

One input terminal of the comparator 31 is supplied with a pixel signalP from the pixel 24P in the pixel array 24, while another input terminalof the comparator 31 is supplied with the ramp signal R from thereference voltage circuit 26. The comparator 31 compares the pixelsignal P with the ramp signal R, and supplies a comparison result signalobtained as a result of the comparison to the counter 32.

The counter 32 is supplied with a counter clock signal (CKX) of apredetermined frequency from the PLL 25. The counter 32 counts thecounter clock signal according to the comparison result signal suppliedfrom the comparator 31 and control of the system controlling unit 22.The counter 32 thereby converts the analog pixel signal P output by thepixel 24P into digital pixel data, and then outputs the digital pixeldata. The counter 32 in FIG. 3 includes a latch and 13 TFFs (ToggleFlip-Flops), and outputs 13-bit pixel data.

The bus 33 is a 13-bit bus for connecting the counter 32 with the senseamplifier 29.

The horizontal scanning circuit 28 sequentially supplies a signal tooutput pixel data to a plurality of counters 32 arranged in thehorizontal direction of the column ADC 27 in predetermined timingaccording to control of the system controlling unit 22.

The sense amplifier 29 converts the pixel data supplied in parallel fromthe column ADC 27 via the bus 33 into serial pixel data. The senseamplifier 29 then outputs the serial pixel data to the outside.

An operation of the CMOS sensor 21 will next be described with referenceto FIG. 4.

FIG. 4 shows, from a top in order, the pixel signal P output by thepixel in the pixel array 24, the ramp signal R output by the referencevoltage circuit 26, the comparison result signal output by thecomparator 31, a signal for changing to counting up or counting down bythe counter 32, the counter clock signal output by the PLL 25, and acounter output signal output by the counter 32.

As shown in a first chart from the top of FIG. 4, according to a controlsignal supplied from the vertical scanning circuit 23, the pixel in thepixel array 24 outputs the pixel signal P (a reset component)corresponding to a predetermined reference potential during a resetsignal A/D conversion period, and outputs the pixel signal P (a datacomponent) according to a charge corresponding to an amount of lightreceived by a photodetector not shown in the figure during a data signalA/D conversion period.

As shown in a second chart from the top of FIG. 4, the reference voltagecircuit 26 outputs the ramp signal R whose voltage drops with a fixedslope from a predetermined initial voltage. In the ramp signal R, aperiod during which the voltage corresponding to the data signal A/Dconversion period drops is longer than a period during which the voltagecorresponding to the reset signal A/D conversion period drops.

As shown in a third chart from the top of FIG. 4, the comparator 31compares the pixel signal P with the ramp signal R, and outputs acomparison result signal at an H-level when the pixel signal P exceedsthe ramp signal R, and outputs a comparison result signal at an L-levelwhen the pixel signal P is below the ramp signal R. That is, in the casewhere the voltage of the ramp signal R drops with a fixed slope, thecomparator 31 outputs the comparison result signal that makes atransition from the H-level to the L-level when the ramp signal Rcoincides with the pixel signal P.

As shown in a fourth chart from the top of FIG. 4, the counter 32 issupplied with a signal for changing to counting up or counting down fromthe system controlling unit 22, the signal being at an L-level while thevoltage of the ramp signal R drops with a fixed slope during the resetsignal A/D conversion period, and the signal being at an H-level whilethe voltage of the ramp signal R drops with a fixed slope during thedata signal A/D conversion period.

The PLL 25 supplies the counter 32 with the counter clock signal of apredetermined frequency as shown in a fifth chart from the top of FIG.4, for example a high-speed clock signal of 500 MHz.

As shown in a sixth chart from the top (at a bottom) of FIG. 4, thecounter 32 counts the counter clock signal, and outputs pixel data.

Specifically, when the signal for changing to counting up or countingdown is at the L-level, the counter 32 is in a counting-down mode, inwhich mode the counter 32 starts counting down at a time at which thevoltage of the ramp signal R starts dropping during the reset signal A/Dconversion period and then retains a count value (reset signal count)counted until a time when the comparison result signal makes atransition from the H-level to the L-level. Thereafter, the signal forchanging to counting up or counting down makes a transition from theL-level to the H-level, and the counter 32 is set in a counting-up mode,in which mode the counter 32 starts counting up at a time at which thevoltage of the ramp signal R starts dropping during the data signal A/Dconversion period. The counter 32 then outputs, as pixel data, a countvalue of a difference between a count value (data signal count) counteduntil a time when the comparison result signal makes a transition fromthe H-level to the L-level and the reset signal count.

The CMOS sensor 21 will next be further described with reference to FIG.5.

The CMOS sensor 21 in FIG. 5 includes the reference voltage circuit 26,N comparators 31.sub.1 to 31.sub.N, N counters 32.sub.1 to 32.sub.N, anFD 41, a transistor 42, a current source 43, and a resistance 44.

The FD 41 and the transistor 42 are a part of constituent elements ofthe pixel 24P in the pixel array 24 in FIG. 3. A charge output accordingto an amount of light received by a photodiode not shown in the figureis transferred to and accumulated in the FD 41 according to control ofthe vertical scanning circuit 23. The transistor 42 amplifies a chargeaccumulated in the FD 41, and outputs a pixel signal P according tocontrol of the vertical scanning circuit 23.

One terminal of the FD 41 is grounded, and another terminal of the FD 41is connected to the gate of the transistor 42. The source of thetransistor 42 is connected to a power supply voltage VDD, while thedrain of the transistor 42 is grounded via the current source 43 and isconnected to one input terminal of the comparator 31.sub.1. The outputterminal of the reference voltage circuit 26 is connected to anotherinput terminal of the comparator 31.sub.1, and is grounded via theresistance 44.

In the thus formed CMOS sensor 21, the reference potential of the pixelsignal P input to the comparator 31 is a GND level because the FD 41 inwhich the charge output according to the amount of light received by thephotodiode not shown in the figure is accumulated is grounded. Thereference potential of the ramp signal R input to the comparator 31 isalso a GND level because the output terminal of the reference voltagecircuit 26 is grounded via the resistance 44. Thus, noise sources ofnoises occurring in the pixel signal P and the ramp signal R are acommon GND.

Thus, the noises occurring in the pixel signal P and the ramp signal Rwith the GND as the noise source are in phase with each other as viewedfrom the comparator 31, and when the comparator 31 compares the pixelsignal P and the ramp signal R with each other, the noises occurring inthe pixel signal P and the ramp signal R cancel each other out.Therefore, the comparison result signal output by the comparator 31 isnot affected by the noises. It is thus possible to suppress theoccurrence of noises in the pixel data.

The suppression of the occurrence of noises can be described also fromthe circuit configuration of the reference voltage circuit 26.

FIG. 6 is a circuit diagram showing an example of configuration of thereference voltage circuit 26.

The reference voltage circuit 26 in FIG. 6 includes a constant-currentgenerating circuit 50, three transistors 51 to 53, a gain changingcircuit 54, a transistor 55, a ramp generating circuit 56, and an offsetcircuit 57.

One terminal of the constant-current generating circuit 50 is grounded,and another terminal of the constant-current generating circuit 50 isconnected to the drain of the transistor 51. The source of thetransistor 51 is connected to the power supply voltage VDD, and the gateof the transistor 51 is connected to the gate of the transistor 52. Apoint of connection between the gate of the transistor 51 and the gateof the transistor 52 is connected to a point of connection between theconstant-current generating circuit 50 and the drain of the transistor51, and is also connected to the offset circuit 57.

The source of the transistor 52 is connected to the power supply voltageVDD, and the drain of the transistor 52 is connected to the drain of thetransistor 53.

The gate of the transistor 53 is connected to the gain changing circuit54. A point of connection between the gate of the transistor 53 and thegain changing circuit 54 is connected to a point of connection betweenthe drain of the transistor 52 and the drain of the transistor 53.

When the gain of an image picked up by the CMOS sensor 21 is changed, orwhen the gain is increased, for example, the gain changing circuit 54makes the ramp signal R at a time of gain increase as shown in FIG. 8 tobe described later output from the reference voltage circuit 26. Thegain changing circuit 54 and the transistor 53 form a current mirrorcircuit.

The drain of the transistor 55 is connected to the gain changing circuit54, the source of the transistor 55 is connected to the power supplyvoltage VDD, and the gate of the transistor 55 is connected to the rampgenerating circuit 56. A point of connection between the drain of thetransistor 55 and the gain changing circuit 54 is connected to a pointof connection between the gate of the transistor 55 and the rampgenerating circuit 56.

The ramp generating circuit 56 is a circuit for generating the rampsignal R as shown in FIG. 4.

The offset circuit 57 makes the ramp signal R at a time of an offset asshown in FIG. 9 to be described later output from the reference voltagecircuit 26 in order to prevent pixel data from being affected by a shiftin black reference which shift is caused by a dark current resultingfrom a change in temperature or the like or a circuit offset component,for example.

Letting In be a current output from the ramp generating circuit 56, If1be a current output from the offset circuit 57, and Rout be theresistance value of the resistance 44, the ramp signal R output from thethus formed reference voltage circuit 26 is expressed by the followingEquation (1).Ramp Signal R=(Ir1+If1).times.Rout  (1)

As shown in Equation (1), the ramp signal R does not have the term ofthe power supply voltage VDD. This also shows that noises of the powersupply voltage VDD do not affect the pixel data.

FIG. 7 is a circuit diagram showing a configuration of an example of thereference voltage circuit 15 of the CMOS sensor 11 in the past describedwith reference to FIG. 1, that is, the CMOS sensor 11 in which thereference potential of the ramp signal R is the power supply voltageVDD.

The reference voltage circuit 15 in FIG. 7 includes two constant-currentcircuits 60.sub.1 and 60.sub.2, a transistor 61, a gain changing circuit62, a transistor 63, a ramp generating circuit 64, an offset circuit 65,and transistors 66 to 68.

Letting Ir2 be a current output from the ramp generating circuit 64, If2be a current output from the offset circuit 65, and Rout be theresistance value of the resistance 16, the ramp signal R output from thethus formed reference voltage circuit 15 is expressed by the followingEquation (2).Ramp Signal R=VDD−(Ir2+If2).times.Rout  (2)

Thus, when the reference potential of the ramp signal R is the powersupply voltage VDD, the ramp signal R has the term of the power supplyvoltage VDD. Therefore, when a noise occurs in the power supply voltageVDD, the noise is superimposed on the ramp signal R, thus affecting thecomparison result signal output by the comparator 17 (FIG. 1). As aresult, lateral noise as shown in FIG. 2 occurs in an image.

On the other hand, as described above, the reference potential of theramp signal R output from the reference voltage circuit 26 shown in FIG.6 is the GND level, so that such lateral noise occurring in an image canbe suppressed.

The ramp signal R at a time of gain increase will next be described withreference to FIG. 8.

In FIG. 8, an axis of abscissas indicates the passage of time from aleft to a right, and an axis of ordinates indicates the voltage of theramp signal R. A period during which the voltage of the ramp signal Rdrops with a fixed slope within the reset signal A/D conversion perioddescribed with reference to FIG. 4 will be referred to as a reset phase(P-phase), and a period during which the voltage of the ramp signal Rdrops with a fixed slope within the data signal A/D conversion period(FIG. 4) will be referred to as a data phase (D-phase).

The ramp signal R at a normal time represents a waveform when the CMOSsensor 21 picks up an image at a normal brightness. The ramp signal R ata time of gain increase represents a waveform when the CMOS sensor 21picks up an image in a darker condition than normal. That is, in adarker condition than normal, a small amount of charge is accumulated inthe FD 41 in FIG. 5. However, decreasing the slope with which thevoltage of the ramp signal R drops can lengthen a time before thecomparison result signal (FIG. 4) output by the comparator 31 makes atransition from the H-level to the L-level. Thereby the pixel dataoutput by the counter 32 is increased in gain.

A circuit noise occurring in the ramp signal R output from the referencevoltage circuit 26 at a time of gain increase will be described in thefollowing.

The reference voltage circuit 26 is formed as shown in FIG. 6, and avoltage noise VN0 given to the ramp signal R by the constant-currentgenerating circuit 50 is expressed by the following Equation (3).VN0=in0.times.(gm2/gm1).times.(gm4/gm3).times.(gm6/gm5).times.Rout  (3)

In Equation (3), in0 is the current noise of the constant-currentgenerating circuit 50, gm1 is the conductance of the transistor 51, gm2is the conductance of the transistor 52, gm3 is the conductance of thetransistor 53, gm4 is the conductance of the gain changing circuit 54,gm5 is the conductance of the transistor 55, gm6 is the conductance ofthe ramp generating circuit 56, and gm7 is the conductance of the offsetcircuit 57.

At this time, letting vn1 be the voltage noise of the transistor 51, avoltage noise VN1 given to the ramp signal R by the transistor 51 isexpressed by the following Equation (4).VN1=vn1.times.gm2.times.(gm4/gm3).times.(gm6/gm5).times.Rout  (4)

A total noise VN occurring in the ramp signal R is expressed by thefollowing Equation (5).VN.sup.2=VN0.sup.2+VN1.sup.2+VN2.sup.2+VN3.sup.2+VN4.sup.2+VN5.sup.2+VN6.sup.2+VN7.sup.2  (5)

In Equation (5), VN2 is a voltage noise given to the ramp signal R bythe transistor 52, VN3 is a voltage noise given to the ramp signal R bythe transistor 53, VN4 is a voltage noise given to the ramp signal R bythe gain changing circuit 54, VN5 is a voltage noise given to the rampsignal R by the transistor 55, VN6 is a voltage noise given to the rampsignal R by the ramp generating circuit 56, and VN7 is a voltage noisegiven to the ramp signal R by the offset circuit 57.

In this case, for example, when the gain is a maximum, and a returnratio (mirror ratio=gm4/gm3) in the current mirror circuit of the gainchanging circuit 54 and the transistor 53 is one, for example, thevalues of voltage noises VN0 to VN3 appear in the ramp signal R as theyare, and thus become noticeable as noise.

In order to suppress an increase in noise at the time of increased gain,the size of the gain changing circuit 54 has to be made sufficientlysmaller than the size of the transistor 53. Specifically, as shown inFIG. 8, when the gain is changed to two times, the size of the gainchanging circuit 54 is halved, that is, the conductance gm4 of the gainchanging circuit 54 is halved, whereby the current produced by thecurrent mirror circuit of the gain changing circuit 54 and thetransistor 53 is reduced. In this case, the noises VN0 to VN3 at thetime of the increased gain can be suppressed to half of the noises VN0to VN3 at the time of normal gain.

Incidentally, at a time of low gain, the noises VN0 to VN3 appear in thetotal noise VN as they are. However, such noises can be reduced by forexample increasing the current value of the constant-current generatingcircuit 50 or performing a band limitation by a capacitance or the like.

The ramp signal R at an offset time will next be described withreference to FIG. 9.

In FIG. 9, an axis of abscissas indicates the passage of time from aleft to a right, and an axis of ordinates indicates the voltage of theramp signal R.

In order to prevent pixel data from being affected by a shift in blackreference which shift is caused by a dark current resulting from achange in temperature or the like, a current output by the offsetcircuit 57 is superimposed on the ramp signal R at the offset time fromthe ramp generating circuit 56, and the result is output. That is, atthe offset time, as shown in FIG. 9, voltage in the reset phase at theoffset time is higher than voltage in the reset phase at a normal time,and reference voltage in the reset phase (voltage before dropping with afixed slope will be referred to as reference voltage) is higher by anoffset level than reference voltage in the data phase. The offset levelis set according to a change in temperature or the like.

Because the reference voltage in the reset phase is thus higher by theoffset level than the reference voltage in the data phase, even when thedark current is increased by a change in temperature or the like, theincrease can be cancelled out. Such an offset in the reset phase isperformed by the offset circuit 57 outputting a current corresponding tothe offset level.

Thus, the offset circuit 57 outputs a current at the offset time, anddoes not output current at the normal time. Thereby, at the normal time,the voltage noise of voltage output by the offset circuit 57 isprevented from causing a noise in the ramp signal R.

A circuit noise occurring in the ramp signal R output from the referencevoltage circuit 26 at an offset time will be described in the following.

As described with reference to FIG. 8, the total noise VN occurring inthe ramp signal R is expressed by the above-described Equation (5). Thevoltage noise given to the ramp signal R by the offset circuit 57 isVN7. When the configuration of current flowing through the offsetcircuit 57 is that of a system performing current distribution from thegate of the transistor 51 by a current mirror, the voltage noise VN7given to the ramp signal R by the offset circuit 57 is expressed by thefollowing Equation (6).VN7=in0.times.(gm7/gm1).times.Rout  (6)

As described above, in the circuit configuration of the referencevoltage circuit 26 shown in FIG. 6, the offset circuit 57 does notoutput current for an offset at the normal time. Therefore the term ofthe voltage noise VN7 given to the ramp signal R in Equation (6) can beignored. The occurrence of noise can thus be suppressed more than in aCMOS sensor in the past having a configuration that adds an offset inthe data phase.

FIG. 10 is a diagram of assistance in explaining the ramp signal R atthe offset time in the reference voltage circuit 15 of the CMOS sensor11 in the past in Patent Document 3, that is, the reference voltagecircuit 15 of FIG. 7.

Supposing that a configuration that similarly adds an offset in the dataphase is adopted in the present invention having the configuration ofFIG. 6, the offset circuit 57 has to output a current, that is, a largeamount of current has to be passed through the resistance 44 at thenormal time in order to secure an offset level. Then, at the offsettime, a configuration is necessary in which by decreasing the current,the reference voltage in the data phase becomes lower.

Thus, in the configuration of FIG. 10, at the normal time, the offsetcircuit 57 outputs a current, and therefore the voltage noise of theoffset circuit 57 affects the ramp signal R.

On the other hand, as described above, in the configuration of FIG. 9,the offset circuit 57 does not output current at the normal time.Therefore the noise occurring in the ramp signal R can be reduced ascompared with the configuration in the past of FIG. 10.

In addition, as shown in FIG. 7, the reference voltage circuit 15 has acircuit configuration in which it is necessary to provide theconstant-current circuit 60.sub.1 for the gain changing circuit 62 andthe constant-current circuit 60.sub.2 for the offset circuit 65independently of each other. However, the gain changing circuit 54 andthe offset circuit 57 in the reference voltage circuit 26 can share theconstant-current generating circuit 50. This makes it possible to makethe layout area of the reference voltage circuit 26 smaller than that ofthe reference voltage circuit 15, and in turn reduce the layout area ofthe CMOS sensor 21. Further, power consumption can be reduced.

Further, for example, a signal processing circuit or the like foreliminating laterally drawn noise caused by difference in referencepotential between the pixel signal P and the ramp signal R has beenrequired in the past. However, the CMOS sensor 21 suppresses the noise,thus eliminating the need for such a signal processing circuit. Thisalso makes it possible to reduce the layout area of the CMOS sensor 21and reduce power consumption.

Incidentally, in the present embodiment, a sensor including unit pixelsformed by an NMOS has been described. However, the present invention isapplicable to a sensor including unit pixels formed by a PMOS. In thiscase, polarities in the above description all become opposite. Forexample, the GND level as a reference is changed to the power supplyvoltage VDD as a reference. Also in this case, the occurrence of noisecan be suppressed by setting the reference potential of the pixel signalP and the reference potential of the ramp signal R at a same level, forexample.

The CMOS sensor 21 to which the present invention is applied can beincorporated into devices such as a portable telephone, a compactdigital camera, a high-grade single-lens reflex camera, a camcorder, amonitoring camera, a guidance system and the like. These devices canpick up a low-noise image.

It is to be noted that embodiments of the present invention are notlimited to the above-described embodiments, and that various changes canbe made without departing from the spirit of the present invention.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

The invention claimed is:
 1. A light detecting device comprising: apixel including: a photoelectric converter configured to receiveincident light and output an amount of charge, and a floating diffusionconfigured to receive the amount of charge; an amplifying transistorcoupled to the floating diffusion and configured to output a pixelsignal corresponding to the amount of charge; a signal line configuredto convey the pixel signal; a current source circuit coupled to thesignal line; a reference signal generating circuit configured togenerate a reference signal; a comparator configured to compare thepixel signal with the reference signal; and a resistance coupled to anoutput node of the reference signal generation circuit, wherein a firstterminal of the floating diffusion is grounded and a second terminal ofthe floating diffusion is coupled to a gate of the amplifyingtransistor, and wherein the output node of the reference signalgenerating circuit is grounded via the resistance.
 2. The lightdetecting device according to claim 1, wherein said reference signalgenerating circuit includes: a gain changing circuit configured tochange a gain of an image picked up by said image pickup circuit bychanging a slope of said reference signal; and a mirror transistorforming a current mirror circuit with said gain changing circuit,wherein when said gain is a minimum, a ratio between a conductance ofsaid gain changing circuit and a conductance of said mirror transistoris about one.
 3. The light detecting device according to claim 2,wherein said gain changing circuit increases said gain by decreasing acurrent produced by the current mirror circuit of said gain changingcircuit and said mirror transistor.
 4. The light detecting deviceaccording to claim 2, wherein said reference signal is in a form havinga first section in which the voltage drops with the fixed slope from afirst initial voltage and a second section in which the voltage dropswith the fixed slope from a second initial voltage, and said referencesignal generating circuit further includes: a ramp signal generatingcircuit configured to generate a ramp signal in which said first initialvoltage and said second initial voltage are equal to each other; and anoffset circuit configured to superimpose an offset component for makingsaid first initial voltage higher than said second initial voltage ontosaid ramp signal at an offset time when said first initial voltage andsaid second initial voltage are offset from each other.
 5. The lightdetecting device to claim 4, wherein said gain changing circuit and saidoffset circuit use a common constant-current circuit.
 6. The lightdetecting device according to claim 1, further comprising: a counterconfigured to receive a comparison result from the comparator, and tooutput a digital pixel data corresponding to the pixel signal inresponse to the comparison result.
 7. A CMOS (Complementary Metal OxideSemiconductor) sensor formed by disposing an image pickup circuit on asemiconductor chip, wherein said image pickup circuit includes: a pixelincluding a photoelectric converter configured to receive incident lightand output an amount of charge, and a floating diffusion configured toreceive the charge; an amplifying transistor coupled to the floatingdiffusion and configured to output a pixel signal corresponding to theamount of charge; a signal line configured to convey the pixel signal; acurrent source circuit coupled to the signal line; a reference signalgenerating circuit configured to generate a reference signal; acomparator configured to compare the pixel signal output with thereference signal; and a resistance coupled to an output node of thereference signal generation circuit, wherein a first terminal of thefloating diffusion is grounded and a second terminal of the floatingdiffusion is coupled to a gate of the amplifying transistor, and whereinthe output node of the reference signal generating circuit is groundedvia the resistance.
 8. The CMOS sensor according to claim 7, whereinsaid reference signal generating circuit includes: a gain changingcircuit configured to change a gain of an image picked up by said imagepickup circuit by changing a slope of said reference signal; and amirror transistor forming a current mirror circuit with said gainchanging circuit, wherein when said gain is a minimum, a ratio between aconductance of said gain changing circuit and a conductance of saidmirror transistor is about one.
 9. The CMOS sensor according to claim 8,wherein said gain changing circuit increases said gain by decreasing acurrent produced by the current mirror circuit of said gain changingcircuit and said mirror transistor.
 10. The CMOS sensor according toclaim 8, wherein said reference signal is in a form having a firstsection in which the voltage drops with the fixed slope from a firstinitial voltage and a second section in which the voltage drops with thefixed slope from a second initial voltage, and said reference signalgenerating circuit further includes: a ramp signal generating circuitconfigured to generate a ramp signal in which said first initial voltageand said second initial voltage are equal to each other; and an offsetcircuit configured to superimpose an offset component for making saidfirst initial voltage higher than said second initial voltage onto saidramp signal at an offset time when said first initial voltage and saidsecond initial voltage are offset from each other.
 11. The CMOS sensoraccording to claim 10, wherein said gain changing circuit and saidoffset circuit use a common constant-current circuit.
 12. The CMOSsensor according to claim 6, further comprising: a counter configured toreceive a comparison result from the comparator, and to output a digitalpixel data corresponding to the pixel signal in response to thecomparison result.
 13. An image pickup device having a CMOS(Complementary Metal Oxide Semiconductor) sensor formed by disposing animage pickup circuit on a semiconductor chip, wherein said image pickupcircuit includes: a pixel including a photoelectric converter configuredto receive incident light and output an amount of charge, and a floatingdiffusion configured to receive the charge; an amplifying transistorcoupled to the floating diffusion and configured to output a pixelsignal corresponding to the amount of charge; a signal line configuredto convey the pixel signal; a current source circuit coupled to thesignal line; a reference signal generating circuit configured togenerate a reference signal; a comparator configured to compare thepixel signal output with the reference signal; and a resistance coupledto an output node of the reference signal generation circuit, wherein afirst terminal of the floating diffusion is grounded and a secondterminal of the floating diffusion is coupled to a gate of theamplifying transistor, and wherein the output node of the referencesignal generating circuit is grounded via the resistance.
 14. The imagepickup device according to claim 13, wherein said reference signalgenerating circuit includes: a gain changing circuit configured tochange a gain of an image picked up by said image pickup circuit bychanging a slope of said reference signal; and a mirror transistorforming a current mirror circuit with said gain changing circuit,wherein when said gain is a minimum, a ratio between a conductance ofsaid gain changing circuit and a conductance of said mirror transistoris about one.
 15. The image pickup device according to claim 14, whereinsaid gain changing circuit increases said gain by decreasing a currentproduced by the current mirror circuit of said gain changing circuit andsaid mirror transistor.
 16. The image pickup device according to claim14, wherein said reference signal is in a form having a first section inwhich the voltage drops with the fixed slope from a first initialvoltage and a second section in which the voltage drops with the fixedslope from a second initial voltage, and said reference signalgenerating circuit further includes: a ramp signal generating circuitconfigured to generate a ramp signal in which said first initial voltageand said second initial voltage are equal to each other; and an offsetcircuit configured to superimpose an offset component for making saidfirst initial voltage higher than said second initial voltage onto saidramp signal at an offset time when said first initial voltage and saidsecond initial voltage are offset from each other.
 17. The image pickupdevice according to claim 16, wherein said gain changing circuit andsaid offset circuit use a common constant-current circuit.
 18. The imagepickup device according to claim 13, further comprising: a counterconfigured to receive a comparison result from the comparator, and tooutput a digital pixel data corresponding to the pixel signal inresponse to the comparison result.